NI/Emerson develops a broad portfolio of RF transceiver solutions. The interaction of system architecture, control, and signal processing influences the observable behavior of these devices under changing operating conditions. In this internship, you will contribute to the
As a PhD candidate in R&D CMOS Integration, you will conduct advanced research on the development and optimization of ferroelectric HfO₂-based devices for next‑generation memory and AI applications. Core Research Topics Ferroelectric HfO₂ Devices (FeFET /